v ds i d (at v gs =-2.5v) -8a r ds(on) (at v gs =-2.5v) < 22m w r ds(on) (at v gs =-1.8v) < 28m w r ds(on) (at v gs =-1.5v) < 36m w r ds(on) (at v gs =-1.2v) < 53m w symbol the AON2401 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -8v g d s symbol v ds v gs i dm t j , t stg symbol t 10s steady-state pulsed drain current c -32 a t a =25c c/w maximum junction-to-ambient a d 80 thermal characteristics units maximum junction-to-ambient a c/w r q ja 37 66 45 parameter v maximum units parameter drain-source voltage -8 a t a =70c continuous drain current g -6 -8 typ max v 5 gate-source voltage c 2.8 junction and storage temperature range -55 to 150 power dissipation a p d w t a =70c 1.8 t a =25c i d AON2401 8v n-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -8 v v ds =-8v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.15 -0.4 -0.65 v i d(on) -32 a 18 22 t j =125c 24.5 32 22.6 28 m w 27.7 36 m w 39 53 m w g fs 33 s v sd -0.55 -1 v i s -4 a c iss 1465 pf c oss 345 pf c rss 235 pf r g 10 w q g 12.5 18 nc q gs 1.5 nc q gd 3 nc t 4 ns r ds(on) static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i dss reverse transfer capacitance v gs =0v, v ds =-4v, f=1mhz switching parameters m w on state drain current i d =-250 m a, v gs =0v v gs =-2.5v, v ds =-5v v gs =-2.5v, i d =-8a m a v ds =v gs , i d =-250 m a v ds =0v, v gs =5v gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge zero gate voltage drain current gate-body leakage current v ds =-5v, i d =-8a v gs =-1.5v, i d =-4a forward transconductance v gs =-1.8v, i d =-6a v gs =-1.2v, i d =-2a i s =-1a,v gs =0v v gs =-4.5v, v ds =-4v, i d =-8a gate source charge gate drain charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage t d(on) 4 ns t r 28 ns t d(off) 99 ns t f 43 ns t rr 23 ns q rr 7 nc body diode reverse recovery time i f =-8a, di/dt=100a/ m s turn-off fall time body diode reverse recovery charge i f =-8a, di/dt=100a/ m s turn-off delaytime turn-on rise time turn-on delaytime v gs =-4.5v, v ds =-4v, r l =0.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON2401 8v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 10 20 30 40 50 0 2 4 6 8 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-8a v gs =-1.8v i d =-6a 25 c 125 c v ds =-5v v gs =-1.5v v gs =-2.5v 0 10 20 30 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.2v -1.5v -2.5v -5v -1.8v -2v v gs =-1.8v v gs =-1.5v i d =-4a v gs =-1.2v v gs =-1.2v i d =-2a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 10 20 30 40 50 0 1 2 3 4 5 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-8a 25 c 125 c AON2401 8v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 1 2 3 4 5 0 3 6 9 12 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 2 4 6 8 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =-4v i d =-8a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10 m s 40 ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =80 c/w AON2401 8v n-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i AON2401 8v n-channel mosfet www.freescale.net.cn 5 / 5
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